Title :
Quantum-dot microlasers
Author :
Rennon, S. ; Avary, K. ; Klopf, F. ; Wolf, A. ; Emmerling, M. ; Reithmaier, J.P. ; Forchel, A.
Author_Institution :
Technische Phys., Univ. of Wurzberg, Germany
fDate :
8/31/2000 12:00:00 AM
Abstract :
Edge-emitting short-cavity lasers with deeply-etched Bragg mirrors were fabricated on a GaInAs/AlGaAs laser structure with a single active layer of self-organised GaInAs quantum-dots. Continuous wave operation has been achieved down to cavity lengths of 16 μm with a minimum threshold current of 1.2 mA for 30 μm-long devices
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser beams; laser mirrors; microcavity lasers; optical fabrication; quantum well lasers; semiconductor quantum dots; surface emitting lasers; 1.2 mA; 16 mum; 30 mum; GaInAs; GaInAs-AlGaAs; GaInAs/AlGaAs laser structure; cavity lengths; continuous wave operation; deeply-etched Bragg mirrors; edge-emitting short-cavity lasers; fabrication; minimum threshold current; quantum-dot microlasers; self-organised GaInAs quantum-dots; single active layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20001084
