Title :
1200 V fully implanted JI technology
Author :
Hardikar, S. ; Xu, Y.Z. ; De Souza, M.M. ; Narayanan, E. M Sankara
Author_Institution :
Emerging Technol. Res. Centre, De Monfort Univ., Leicester, UK
fDate :
8/31/2000 12:00:00 AM
Abstract :
A novel 1200 V fully implanted junction isolation technology for high voltage integrated circuits (HVICs) is proposed. This technique employs the variation in lateral doping (VLD) technique to achieve change in the thickness as well as the concentration of the drift region in a lateral power device to enable effective distribution of the electric field and low on-state resistance. Detailed 2D numerical simulations clearly validate this new approach and show enhancement performance of a lateral MOSFET in comparison to a device with a uniformly doped drift region
Keywords :
CMOS integrated circuits; doping profiles; ion implantation; isolation technology; power MOSFET; power integrated circuits; semiconductor device breakdown; 1200 V; 2D numerical simulations; HV integrated circuits; HVIC; RESURF technique; doped drift region; electric field distribution; fully implanted JI technology; high voltage ICs; junction isolation technology; lateral MOSFET; lateral power device; low on-state resistance; modified HV-CMOS process; performance enhancement; variation in lateral doping technique;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20001102
