DocumentCode
1381037
Title
A Nonvolatile InGaZnO Charge-Trapping-Engineered Flash Memory With Good Retention Characteristics
Author
Su, Nai-Chao ; Wang, Shui Jinn ; Chin, Albert
Author_Institution
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume
31
Issue
3
fYear
2010
fDate
3/1/2010 12:00:00 AM
Firstpage
201
Lastpage
203
Abstract
We report an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor nonvolatile memory (NVM). This NVM shows a large 1.2-V extrapolated ten-year memory window, along with low 10-V/-12-V program/erase voltage, fast 1-ms/100-??s speed, and good endurance. This was achieved using a charge-trap-engineered structure and high- ?? layers.
Keywords
II-VI semiconductors; amorphous semiconductors; flash memories; gallium compounds; indium compounds; thin film transistors; wide band gap semiconductors; zinc compounds; InGaZnO; amorphous indium gallium zinc oxide thin-film transistor nonvolatile memory; extrapolated ten-year memory window; high-?? layers; nonvolatile charge-trapping-engineered flash memory; program-erase voltage; retention characteristics; voltage -12 V; voltage 1.2 V; voltage 10 V; Charge-trapping-engineered Flash (CTEF); InGaZnO; high- $kappa$ ; metal–oxide–nitride–oxide–semiconductor (MONOS); nonvolatile memory (NVM);
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2009.2037986
Filename
5378649
Link To Document