Title :
Fabrication of masks for DUV and EUV lithography using silicide direct-write electron beam lithography process
Author :
Lavallée, E. ; Beauvais, J. ; Drouin, D.
Author_Institution :
Dept. de Genie Electr., Sherbrooke Univ., Que., Canada
fDate :
8/31/2000 12:00:00 AM
Abstract :
Silicide direct-write electron beam lithography (SiDWEL) is a high resolution lithography process which does not require spin-coating. The silicide structures formed by SiDWEL are used as etch masks for the fabrication of DUV and EUW lithography mask elements. Resolutions better than 250 nm for chromium DUV masks and 200 nm for tantalum EUV masks are obtained
Keywords :
chromium; electron beam lithography; integrated circuit technology; masks; tantalum; ultraviolet lithography; 200 nm; 250 nm; Cr; Cr DUV masks; DUV lithography; EUV lithography; SiDWEL process; Ta; Ta EUV masks; deep UV lithography; etch masks; extreme UV lithography; high resolution lithography process; lithography mask elements; mask fabrication; silicide direct-write electron beam lithography; silicide structures;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20001097
