DocumentCode
1381451
Title
GaAlAs/GaAs metamorphic Bragg mirror for long wavelength VCSELs
Author
Goldstein, L. ; Fortin, C. ; Starck, C. ; Plais, A. ; Jacquet, J. ; Boucart, J. ; Rocher, A. ; Poussou, C.
Author_Institution
Alcatel Alsthom Recherche, Marcoussis, France
Volume
34
Issue
3
fYear
1998
fDate
2/5/1998 12:00:00 AM
Firstpage
268
Lastpage
270
Abstract
A high reflectivity GaAs/AlGaAs Bragg mirror (>99.7%) has been grown for the first time on InP. Dislocations present in the metamorphic material do not propagate to the active layer. The metamorphic mirror offers a promising alternative to wafer fusion for long wavelength surface-emitting lasers
Keywords
III-V semiconductors; aluminium compounds; dislocations; distributed Bragg reflector lasers; gallium arsenide; laser cavity resonators; mirrors; optical communication equipment; reflectivity; semiconductor lasers; surface emitting lasers; GaAs-AlGaAs; InP; InP substrate; dislocations; high reflectivity mirror; long wavelength VCSEL; metamorphic Bragg mirror; surface-emitting lasers; vertical cavity SEL;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19980117
Filename
677357
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