Title :
Growth and characterisation of InAs/InGaSb/InAs/AlSb infrared laser structures
Author :
Yang, M.J. ; Moore, W.J. ; Bennett, Brian R. ; Shanabrook, B.V.
Author_Institution :
Naval Res. Lab., Washington, DC
fDate :
2/5/1998 12:00:00 AM
Abstract :
The authors have studied the molecular-beam epitaxial growth of type-II heterostructures for mid-wavelength infrared lasers. Based on their photoluminescence spectra and X-ray diffraction patterns, it is found that the quality of these heterostructures is highly sensitive to the growth temperature and the interfacial bond type
Keywords :
indium compounds; InAs-InGaSb-InAs-AlSb; MBE growth; X-ray diffraction patterns; growth temperature; infrared laser structures; interfacial bond type; mid-wavelength IR lasers; molecular-beam epitaxial growth; photoluminescence spectra; type-II heterostructures;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981221
