DocumentCode :
1381456
Title :
Growth and characterisation of InAs/InGaSb/InAs/AlSb infrared laser structures
Author :
Yang, M.J. ; Moore, W.J. ; Bennett, Brian R. ; Shanabrook, B.V.
Author_Institution :
Naval Res. Lab., Washington, DC
Volume :
34
Issue :
3
fYear :
1998
fDate :
2/5/1998 12:00:00 AM
Firstpage :
270
Lastpage :
272
Abstract :
The authors have studied the molecular-beam epitaxial growth of type-II heterostructures for mid-wavelength infrared lasers. Based on their photoluminescence spectra and X-ray diffraction patterns, it is found that the quality of these heterostructures is highly sensitive to the growth temperature and the interfacial bond type
Keywords :
indium compounds; InAs-InGaSb-InAs-AlSb; MBE growth; X-ray diffraction patterns; growth temperature; infrared laser structures; interfacial bond type; mid-wavelength IR lasers; molecular-beam epitaxial growth; photoluminescence spectra; type-II heterostructures;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19981221
Filename :
677358
Link To Document :
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