Title :
Thermo-mechanical characterization of passive stress sensors in Si interposer
Author :
Vianne, Benjamin ; Bar, P. ; Fiori, Vincent ; Gallois-Garreignot, Sebastien ; Ewuame, Komi Atchou ; Chausse, Pascal ; Escoubas, Stephanie ; Hotellier, N. ; Thomas, O.
Author_Institution :
STMicroelectron., Crolles, France
Abstract :
Passive stress sensors have been integrated in a silicon interposer test vehicle to investigate thermo-mechanical stress in a typical 2.5D system. The present sensors are integrated in a rosette-shape consisting of eight oriented copper serpentines acting like strain gauges. An innovative design allows theoretically the calculation of a partial stress tensor, including three planar and one out-of-plane components. Electrical measurements at wafer level, combined to FIB/SEM cross-sections, revealed a strong impact of elaboration processes on the structures electrical characteristics. Numerical simulations using finite element analysis were built to evaluated the theoretical sensitivity of copper serpentine to mechanical strains. Finally a dedicated four-point bending tool coupled with a four-terminal resistance measurement setup was fabricated to extract experimentally the values of sensors sensitivity factors. Preliminary results depicted in this paper highlight a sensitivity to stress of distinctly oriented resistors. Several identified sources of data dispersion are inherent to the present measurement configuration and prevent a reliable calculation of strain gauges so-called “gauge factors”.
Keywords :
elemental semiconductors; finite element analysis; focused ion beam technology; integrated circuit packaging; scanning electron microscopy; silicon; strain gauges; stress measurement; 2.5D system; FIB-SEM cross-sections; Si; data dispersion; eight oriented copper serpentines; electrical measurements; finite element analysis; four-point bending tool; four-terminal resistance measurement setup; gauge factors; mechanical strains; numerical simulations; out-of-plane components; partial stress tensor; passive stress sensors; resistors; rosette-shape; sensor sensitivity factors; silicon interposer test vehicle; strain gauges; structure electrical characteristics; thermo-mechanical stress; wafer level; Abstracts; Extraterrestrial measurements; Mechanical variables measurement; Reliability; Resistors; Thermomechanical processes;
Conference_Titel :
Thermal, mechanical and multi-physics simulation and experiments in microelectronics and microsystems (eurosime), 2014 15th international conference on
Conference_Location :
Ghent
Print_ISBN :
978-1-4799-4791-1
DOI :
10.1109/EuroSimE.2014.6813829