Title :
Room temperature continuous wave lasing characteristics of GaInAsP/InP microdisk injection laser
Author :
Fujita, Masayuki ; Inoshita, K. ; Baba, Toshihiko
Author_Institution :
Div. of Electr. & Comput. Eng., Yokohama Nat. Univ.
fDate :
2/5/1998 12:00:00 AM
Abstract :
The authors have achieved continuous-wave lasing in a GaInAsP/InP microdisk injection laser at room temperature for the first time. A record low threshold current of 150 μA was demonstrated at a wavelength of 1.63 μm with a high cavity Q of 3300
Keywords :
III-V semiconductors; Q-factor; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser transitions; semiconductor lasers; 1.63 micron; 150 muA; CW lasing characteristics; GaInAsP-InP; continuous wave lasing; high cavity Q; microdisk injection laser; room temperature lasing characteristics; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980109
