Title :
Sb-based monolithic VCSEL operating near 2.2 μm at room temperature
Author :
Baranov, A.N. ; Rouillard, Y. ; Boissier, G. ; Grech, P. ; Gaillard, Sebastien ; Alibert, C.
Author_Institution :
Centre d´Electron., Univ. des Sci. et Tech. du Languedoc, Montpellier
fDate :
2/5/1998 12:00:00 AM
Abstract :
Monolithic Sb-based vertical cavity surface emitting lasers (VCSELs) operating near 2.2 μm at room temperature have been successfully fabricated and characterised. A pulsed output optical power of 20 mW has been achieved, the threshold current density being 2 kA/cm 2 for 200 μm diameter devices. The entire structure was grown in a single growth run using molecular beam epitaxy
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor laser arrays; surface emitting lasers; 2.2 micrometre; 20 mW; 200 micron; AlSbAs-GaSb; III-V semiconductors; molecular beam epitaxy; monolithic VCSEL; pulsed output optical power; single growth run; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980142
