Title :
Very high gain, high sensitivity, 40 GHz narrowband photoreceiver for clock recovery
Author :
Miras-Legros, A. ; Legros, E. ; Giraudet, L. ; Wanlin, G. ; Vuye, S. ; Joly, C.
Author_Institution :
France Telecom, CNET, Bagneux, France
fDate :
2/5/1998 12:00:00 AM
Abstract :
A 40 GHz photoreceiver has been implemented by cascading on a single alumina substrate a fast side-illuminated AlGaInAs-InP PIN photodiode, and three narrow-band amplifier chips, based on a 0.2 μm gate length GaAs pHEMT technology. The package was especially designed to suppress parasitic cavity-resonances. The photoreceiver current-gain is 57 dB, and the average input noise is <30 pA/√Hz over the -3 dB bandwidth of 40.4-41.4 GHz. This is believed to be the highest photoreceiver gain ever reported in a single compact metal package at such a high frequency
Keywords :
digital communication; hybrid integrated circuits; integrated circuit packaging; integrated optoelectronics; optical receivers; p-i-n photodiodes; timing; 2 micron; 40.4 to 41.4 GHz; 57 dB; Al2O3; AlGaInAs-InP; GaAs; GaAs pHEMT technology; alumina substrate; clock recovery; compact metal package; high gain operation; high sensitivity type; narrowband amplifier chips; narrowband photoreceiver; parasitic cavity-resonances suppression; side-illuminated PIN photodiode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980089
