Very high gain, high sensitivity, 40 GHz narrowband photoreceiver for clock recovery

Author

Miras-Legros, A. ; Legros, E. ; Giraudet, L. ; Wanlin, G. ; Vuye, S. ; Joly, C.

Author_Institution

France Telecom, CNET, Bagneux, France

Volume

34

Issue

3

fYear

1998

fDate

2/5/1998 12:00:00 AM

Firstpage

297

Lastpage

299

Abstract

A 40 GHz photoreceiver has been implemented by cascading on a single alumina substrate a fast side-illuminated AlGaInAs-InP PIN photodiode, and three narrow-band amplifier chips, based on a 0.2 μm gate length GaAs pHEMT technology. The package was especially designed to suppress parasitic cavity-resonances. The photoreceiver current-gain is 57 dB, and the average input noise is <30 pA/√Hz over the -3 dB bandwidth of 40.4-41.4 GHz. This is believed to be the highest photoreceiver gain ever reported in a single compact metal package at such a high frequency

Keywords

digital communication; hybrid integrated circuits; integrated circuit packaging; integrated optoelectronics; optical receivers; p-i-n photodiodes; timing; 2 micron; 40.4 to 41.4 GHz; 57 dB; Al₂O₃; AlGaInAs-InP; GaAs; GaAs pHEMT technology; alumina substrate; clock recovery; compact metal package; high gain operation; high sensitivity type; narrowband amplifier chips; narrowband photoreceiver; parasitic cavity-resonances suppression; side-illuminated PIN photodiode;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19980089

Filename

677387