DocumentCode
1381598
Title
p-Type 
Films Deposited at Room Temperature for Thin-Film Transistors
Author
Figueiredo, V. ; Elangovan, E. ; Barros, R. ; Pinto, J.V. ; Busani, T. ; Martins, R. ; Fortunato, Elvira
Author_Institution
Dept. de Cienc. dos Mater., Univ. Nova de Lisboa, Caparica, Portugal
Volume
8
Issue
1
fYear
2012
Firstpage
41
Lastpage
47
Abstract
Thin-films of copper oxide (CuxO) were sputtered from a metallic copper (Cu) target and studied as a function of oxygen partial pressure (OPP). A metallic Cu film with cubic structure obtained from 0% OPP has been transformed to cubic Cu2O phase for the increase in OPP to 9% but then changed to monoclinic CuO phase (for OPP ≥ 25%). The variation in crystallite size (calculated from x-ray diffraction data) was further substantiated by the variation in grain size (surface microstructures). The CuxO films produced with OPP ranging between 9% and 75% showed p-type behavior, which were successfully applied to produce thin-film transistors.
Keywords
X-ray diffraction; copper compounds; crystal structure; crystallites; grain size; semiconductor materials; semiconductor thin films; solid-state phase transformations; sputter deposition; thin film transistors; CuxO; X-ray diffraction; crystallite size; cubic phase; cubic structure; grain size; metallic copper target; monoclinic phase; p-type behavior; sputtering; structural transformation; surface microstructures; temperature 293 K to 298 K; thin film deposition; thin-film transistors; Annealing; Conductivity; Copper; Microstructure; Thin film transistors; X-ray scattering; Copper oxide; p-type oxides; sputtering; thin-film transistors (TFTs);
fLanguage
English
Journal_Title
Display Technology, Journal of
Publisher
ieee
ISSN
1551-319X
Type
jour
DOI
10.1109/JDT.2011.2170153
Filename
6086578
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