Title :
Characteristics of fully quaternary In0.52(Al0.8 Ga0.2)0.48As/In0.53(Al0.2 Ga0.8)0.47As heterostructures in doped-channel FETs
Author :
Lai, L.S. ; Chan, Y.-J. ; Pan, J.W. ; Chyi, J.-I.
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
fDate :
2/5/1998 12:00:00 AM
Abstract :
A fully quaternary In0.52(Al0.8Ga0.2 )0.48As/In0.53(Al0.2Ga0.8 )0.47As heterostructure was introduced into doped-channel FETs (fully-Q DCFETs) on InP substrates for the first time. Combining the advantages of high quality quaternary InAlGaAs Schottky and channel layers, the authors were able to enhance device gate-to-drain and channel breakdown voltages, and to eliminate the kink effect. This results in an extremely low output conductance (g0 =0.6 mS/mm), and a high DC gain ratio (gm/g0≃350)
Keywords :
III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; indium compounds; semiconductor heterojunctions; 0.6 mS/mm; InAlGaAs-InP; InP; InP substrates; channel breakdown voltage; doped-channel FETs; fully quaternary heterostructures; gate-to-drain breakdown voltage; kink effect elimination;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980200
