DocumentCode
1382085
Title
Statistical Evaluation of Electromigration Reliability at Chip Level
Author
Li, Baozhen ; McLaughlin, Paul ; Bickford, Jeanne ; Habitz, Peter ; Netrabile, Dileep ; Sullivan, Timothy
Author_Institution
IBM Syst. & Technol. Group, Essex Junction, VT, USA
Volume
11
Issue
1
fYear
2011
fDate
3/1/2011 12:00:00 AM
Firstpage
86
Lastpage
91
Abstract
Chip level electromigration (EM) reliability is determined by: 1) the element level EM failure probability used for design guideline generation; and 2) the distribution of EM elements against design limits. Balancing these two factors is critical for a chip design to achieve the best performance while maintaining chip level EM reliability. This paper discusses the relationship between element level and chip level EM failure probability and provides examples of EM evaluation of chip designs.
Keywords
electromigration; probability; reliability; chip level electromigration reliability; element level EM failure probability; statistical evaluation; Chip design; electromigration (EM); interconnects; statistical budgeting;
fLanguage
English
Journal_Title
Device and Materials Reliability, IEEE Transactions on
Publisher
ieee
ISSN
1530-4388
Type
jour
DOI
10.1109/TDMR.2010.2093526
Filename
5639038
Link To Document