A Method for Fabricating Practically Channel-Corner-Free Polycrystalline Silicon Thin-Film Transistors

Author

Kang, Il-Suk ; Park, Cheol-Ho ; Kim, Young-Su ; Song, Nam-Kyu ; Joo, Seung-Ki ; Seo, Hyun-Sang ; Ahn, Chi Won ; Yang, Jun-Mo ; Hwang, Wook-Jung

Author_Institution

Sch. of Mater. Sci. & Eng., Seoul Nat. Univ., Seoul, South Korea

Volume

58

Issue

1

fYear

2011

Firstpage

271

Lastpage

275

Abstract

The influences of metal-induced laterally crystallized silicon channel corners on the performance and reliability of thin-film transistors (TFTs) were investigated. It was found that the TFT with the channel width, mostly applied to active matrix organic light-emitting diodes, had weak immunity to electrical stresses because of the heaviest weight of silicide-rich channel corner on the channel width by the geometric effect. The proposed TFT fabrication, which is composed of two consecutive adjacent step switches, makes TFTs practically channel-corner-free, resulting in high reliability. Moreover, it enables TFTs to have more current flow paths that maintain a high performance.

Keywords

crystallisation; elemental semiconductors; semiconductor device reliability; semiconductor device testing; silicon; thin film transistors; Si; active matrix organic light-emitting diodes; channel-corner-free polycrystalline silicon thin-film transistors; electrical stresses; metal-induced laterally crystallized silicon channel; reliability; Crystallization; Logic gates; Silicides; Silicon; Stress; Thin film transistors; Channel corner effect; metal-induced lateral crystallization (MILC); silicide; thin-film transistor (TFT);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2010.2087340

Filename

5639040