DocumentCode
1382128
Title
Modeling of MOS-Side Carrier Injection in Trench-Gate IGBTs
Author
Lu, Liqing ; Chen, Zhiyang ; Bryant, Angus ; Hudgins, Jerry L. ; Palmer, Patrick R. ; Santi, Enrico
Author_Institution
Dept. of Electr. Eng., Univ. of South Carolina, Columbia, SC, USA
Volume
46
Issue
2
fYear
2010
Firstpage
875
Lastpage
883
Abstract
A compact trench-gate insulated-gate bipolar transistor model that captures MOS-side carrier injection is developed. The model retains the simplicity of a 1-D solution to the ambipolar diffusion equation, but at the same time, captures the MOS-side carrier injection and its effects on steady-state carrier distribution in the drift region and on switching waveforms.
Keywords
MIS devices; insulated gate bipolar transistors; semiconductor device models; 1-D solution; MOS-side carrier injection; ambipolar diffusion equation; drift region; insulated-gate bipolar transistor model; steady-state carrier distribution; switching waveforms; trench-gate IGBT; Compact power semiconductor device models; insulated gate bipolar transistors; insulated gate transistor switches; power electronics; power semiconductor devices; semiconductor device modeling;
fLanguage
English
Journal_Title
Industry Applications, IEEE Transactions on
Publisher
ieee
ISSN
0093-9994
Type
jour
DOI
10.1109/TIA.2009.2039770
Filename
5382549
Link To Document