A charge sheet capacitance model of short channel MOSFETs for SPICE

Author

Park, Hong-June ; Ko, Ping Keung ; Hu, Chenming

Author_Institution

Dept. of Electr. Eng., California Univ., Berkeley, CA, USA

Volume

10

Issue

3

fYear

1991

fDate

3/1/1991 12:00:00 AM

Firstpage

376

Lastpage

389

Abstract

An analytic charge sheet capacitance model for short-channel MOSFETs is derived and implemented in SPICE. It is based on a surface potential formulation which computes the approximate surface potential without iterations. The DC current, charges, and their first and second derivatives are continuous under all operating regions. Equations for node charges are derived to guarantee charge conservation. Short-channel effects such as velocity saturation, channel-length modulation, and channel-side-fringing-field capacitances are included in the model equations. The model shows good agreement with the measured gate capacitance for long- and short-channel MOSFETs. The SPICE simulation of a ring oscillator using this model shows the significant variation of circuit performance due to the short-channel effects on capacitances

Keywords

MOS integrated circuits; circuit CAD; insulated gate field effect transistors; semiconductor device models; SPICE; channel-length modulation; channel-side-fringing-field capacitances; charge conservation; charge sheet capacitance model; gate capacitance; model equations; node charges; operating regions; ring oscillator; short channel MOSFETs; surface potential formulation; velocity saturation; Capacitance; Channel bank filters; Doping; Electron mobility; Equations; MOSFETs; Permittivity; SPICE; Silicon; Voltage;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/43.67791

Filename

67791