Excellent charge-trapping properties of ultrathin reoxidized nitrided oxides prepared by rapid thermal processing

Author

Hori, Takashi ; Iwasaki, Hiroshi

Author_Institution

Matsushita Electr. Ind. Co. Ltd., Osaka, Japan

Volume

9

Issue

4

fYear

1988

fDate

4/1/1988 12:00:00 AM

Firstpage

168

Lastpage

170

Abstract

7.7-nm-thick oxide nitrided at 950 degrees C and 1150 degrees C for 60 s were reoxidized by rapid thermal processing in dry oxygen at 900-1150 degrees C for 15-200 s. The nitridation-condition and reoxidation-condition dependences of charge to breakdown (Q/sub BD/), flat-band voltage shift ( Delta V/sub FB/), and increase of midgap interface state density Delta D/sub itm/ under high-field stress were studied. Rapid reoxidation achieves striking improvement of dielectric integrity: the Q/sub BD/ is improved by about 16 times and both the Delta V/sub FB/ and Delta D/sub itm/ are reduced by more than two orders of magnitude compared with those of thermal oxides. A correlation between the improvement and a reduction of hydrogen concentration by reoxidation is found.<>

Keywords

dielectric thin films; electric breakdown of solids; electron traps; heat treatment; interface electron states; metal-insulator-semiconductor structures; oxidation; 15 to 200 s; 7.7 nm; 900 to 1150 degC; H concentration reduction; MIS capacitor; SiNO; breakdown; charge-trapping properties; dielectric integrity; dielectric thin films; electron traps; high-field stress; midgap interface state density; rapid thermal processing; ultrathin reoxidized nitrided oxides; Breakdown voltage; Design for quality; Dielectrics; Electron traps; Interface states; Rapid thermal annealing; Rapid thermal processing; Thermal resistance; Thermal stresses; Ultra large scale integration;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.678

Filename

678