DocumentCode :
1382236
Title :
Growth and Photoelectric Properties of Twinned ZnSe 
Te 
Nanotips
Author :
Chang, S.J. ; Chih, S.H. ; Hsiao, C.H. ; Lan, B.W. ; Wang, S.B. ; Cheng, Y.C. ; Li, T.C. ; Chang, S.P.
Author_Institution :
Dept. of Elec trical Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume :
10
Issue :
3
fYear :
2011
fDate :
5/1/2011 12:00:00 AM
Firstpage :
379
Lastpage :
384
Abstract :
The authors report the growth of high density ZnSe0.9Te0.1 nanotips by molecular beam epitaxy and the fabrication of ZnSeTe nanotip photodetector. It was found that the as-grown ZnSe0.9Te0.1 nanotips were twinned with alternative multidomains and mixture of cubic zinc-blende/hexagonal wurtzite phases. With 5-V applied bias, it was found that photocurrent to dark current contrast ratio of the fabricated photodetector was larger than 700.
Keywords :
II-VI semiconductors; dark conductivity; molecular beam epitaxial growth; nanofabrication; nanosensors; nanostructured materials; photoconductivity; photodetectors; selenium compounds; semiconductor growth; twinning; wide band gap semiconductors; zinc compounds; ZnSe0.9Te0.1; contrast ratio; cubic zinc-blende-hexagonal wurtzite phase mixture; dark current; high density nanotips; molecular beam epitaxy; multidomains; photocurrent; photodetector; photoelectric properties; twinning; Excitons; Materials science and technology; Molecular beam epitaxial growth; Nanowires; Photodetectors; Photonic band gap; Semiconductor materials; Semiconductor nanostructures; Tellurium; Zinc compounds; Molecular beam epitaxy (MBE); ZnSeTe nanotips; photodetector; wurtzite; zinc blende;
fLanguage :
English
Journal_Title :
Nanotechnology, IEEE Transactions on
Publisher :
ieee
ISSN :
1536-125X
Type :
jour
DOI :
10.1109/TNANO.2010.2040626
Filename :
5382566
Link To Document :
