Short-Wave Infrared GaInAsSb Photodiodes Grown on GaAs Substrate by Interfacial Misfit Array Technique

Author

Nunna, Kalyan Chakravarthy ; Tan, Siew Li ; Reyner, Charles J. ; Marshall, Andrew Robert Julian ; Liang, Baolai ; Jallipalli, Anitha ; David, John P R ; Huffaker, Diana L.

Author_Institution

California Nanosyst. Inst., Univ. of California Los Angeles, Los Angeles, CA, USA

Volume

24

Issue

3

fYear

2012

Firstpage

218

Lastpage

220

Abstract

We report GaInAsSb-based p-i-n photodiodes operating in the 2-2.4-μm wavelength range grown on GaAs (100) substrates using the interfacial misfit (IMF) array technique. A zero-bias dynamic-resistance-area product of 260 Ωcm² and a room temperature peak responsivity of 0.8 A/W (at 2 μm) with an estimated maximum detectivity (D*) of ~3.8×10¹⁰ cm Hz^1/2 W^-1 is obtained in the photodiodes at -0.2 V. These preliminary results of the IMF-based GaInAsSb detectors are comparable to similar detectors grown on native GaSb substrates demonstrating the potential of the IMF array growth mode to realize high-quality Sb-based infrared detectors on GaAs substrates.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared detectors; p-i-n photodiodes; GaAs; GaAs (100) substrates; GaInAsSb; IMF array growth mode; IMF-based GaInAsSb detectors; infrared detectors; interfacial misfit array; p-i-n photodiodes; short-wave infrared GaInAsSb photodiodes; temperature 293 K to 298 K; wavelength 2 mum to 2.4 mum; Arrays; Dark current; Detectors; Gallium arsenide; Lattices; Molecular beam epitaxial growth; Substrates; 2-$mu{rm m}$-photodetectors; GaInAsSb; GaSb on GaAs; InGaAsSb; PIN photodiodes; infrared photodetectors; interfacial misfit arrays; short-wave infrared;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2011.2177253

Filename

6086711