Title :
Influence of N-Well Contact Area on the Pulse Width of Single-Event Transients
Author :
Ahlbin, J.R. ; Atkinson, N.M. ; Gadlage, M.J. ; Gaspard, N.J. ; Bhuva, B.L. ; Loveless, T.D. ; Zhang, E.X. ; Chen, L. ; Massengill, L.W.
Author_Institution :
Vanderbilt Univ., Nashville, TN, USA
Abstract :
Heavy-ion broadbeam results from a 90 nm process are presented for five inverter chains with varying n-well contact schemes. Results show that inverters with the smallest percentage of n-well contact area within an n-well produced the longest and most frequent single-event transients (SETs). As the percentage of n-well area contacted increases above 2%, the pulse width and number of SETs levels-off. A result indicating an optimized percentage of n-well area contacted can be calculated that minimizes the pulse width and number of SETs in a digital circuit.
Keywords :
bipolar transistors; digital circuits; invertors; transients; bipolar junction transistor; digital circuit; heavy-ion broadbeam; inverter chains; n-well contact area; pulse width minimisation; single-event transient; size 90 nm; varying n-well contact scheme; CMOS integrated circuits; Inverters; Logic gates; MOSFETs; Pulse measurements; Single event transient; Single event upset; Transient analysis; Digital design; Parasitic BJT; single event; single-event transient; single-event upset;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2011.2172221