DocumentCode :
13825
Title :
Error-Prediction LDPC and Error-Recovery Schemes for Highly Reliable Solid-State Drives (SSDs)
Author :
Tanakamaru, Shuhei ; Yanagihara, Y. ; Takeuchi, Ken
Author_Institution :
Dept. of Electr., Electron., & Commun. Eng., Chuo Univ., Tokyo, Japan
Volume :
48
Issue :
11
fYear :
2013
fDate :
Nov. 2013
Firstpage :
2920
Lastpage :
2933
Abstract :
Highly reliable solid-state drives (SSDs) with error-prediction low-density parity-check (EP-LDPC) and error-recovery schemes are proposed. Since the reliability of the nand flash memory of the SSD is seriously degraded as the scaling, the conventional error-correction scheme is becoming useless. Thus, LDPC error-correcting code (ECC) is considered to be the next-generation ECC for SSD. However, many read cycles are required and the LDPC scheme consumes an unacceptably long read time. To solve this problem, the proposed EP-LDPC scheme realizes the 7 × fewer sequential read cycles than the conventional LDPC scheme. Instead of reading repeatedly, the EP-LDPC scheme estimates errors from VTH, write/erase cycles, data-retention time, and inter-cell coupling information. The bit error rate (BER) estimation is based on the prerecorded table which stores the relations among write/erase cycles, data-retention time, neighboring cell data, and BER. As a result, the acceptable data-retention time of the SSD increases by more than 10 ×. Additionally, the proposed error-recovery scheme is executed and reduces the bit error if the BER of the data exceeds the error-correction capability of EP-LDPC scheme. Program-disturb error-recovery pulse and data-retention error-recovery pulse reduce the BER of the nand flash memory by 76% and 56%, respectively.
Keywords :
NAND circuits; error correction codes; flash memories; parity check codes; LDPC error-correcting code; NAND flash memory; bit error rate estimation; data-retention error-recovery pulse; data-retention time; error-prediction LDPC; error-prediction low-density parity-check; error-recovery schemes; highly reliable solid-state drives; inter-cell coupling information; program-disturb error-recovery pulse; read cycles; reliability; Ash; Bit error rate; Computer architecture; Couplings; Error correction codes; Parity check codes; Reliability; Error-correcting code (ECC); low-density parity-check code (LDPC); nand controller; nand flash memory; reliability; solid-state drive (SSD);
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2013.2280078
Filename :
6601731
Link To Document :
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