Title :
A Study of Total Dose Mitigation Approaches for Charge Pumps in Phase-Locked Loop Applications
Author :
Horst, Stephen J. ; Phillips, Stanley D. ; Cressler, John D. ; Kruckmeyer, Kirby ; Eddy, Robert ; Aude, Arlo ; O´Farrell, Patrick ; Zhang, Benyong ; Wilcox, Edward ; LaBel, Ken
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
An analysis of charge pump design for improved radiation tolerance of phase locked loops is presented. Two radiation-hardened-by-design approaches are considered to mitigate the total ionizing dose damage of the circuit, and a thick-film SOI SiGe process technology has been used to reduce charge collection of single event strikes. The results show that a modified design approach to implement the charge pump using SiGe HBTs can provide advantages in radiation tolerance to improve tri-state leakage performance, particularly for missions expecting large accumulated doses.
Keywords :
Ge-Si alloys; charge pump circuits; phase locked loops; radiation hardening (electronics); silicon-on-insulator; thick film circuits; HBT; SiGe; charge collection reduction; charge pumps; phase-locked loop application; radiation tolerance; radiation-hardened-by-design approach; thick-film SOI; total dose mitigation approach; tristate leakage performance; Charge pumps; Heterojunction bipolar transistors; MOSFETs; Phase locked loops; Radiation effects; Radiation hardening; Silicon germanium; Transient analysis; Charge pumps; HBT; SiGe; frequency synthesizer; radiation effects; radiation hardening; silicon-germanium;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2011.2170200
