Title :
Effects of Ion Atomic Number on Single-Event Gate Rupture (SEGR) Susceptibility of Power MOSFETs
Author :
Lauenstein, Jean-Marie ; Goldsman, Neil ; Liu, Sandra ; Titus, Jeffrey L. ; Ladbury, Raymond L. ; Kim, Hak S. ; Phan, Anthony M. ; LaBel, Kenneth A. ; Zafrani, Max ; Sherman, Phillip
Author_Institution :
NASA/GSFC, Greenbelt, MD, USA
Abstract :
The relative importance of heavy-ion interaction with the oxide, charge ionized in the epilayer, and charge ionized in the drain substrate, on the bias for SEGR failure in vertical power MOSFETs is experimentally investigated. The results indicate that both the charge ionized in the epilayer and the ion atomic number are important parameters of SEGR failure. Implications on SEGR hardness assurance are discussed.
Keywords :
power MOSFET; radiation effects; substrates; SEGR failure; drain substrate; heavy-ion interaction; ion atomic number; power MOSFET; single-event gate rupture susceptibility; Ion beams; Logic gates; MOSFETs; Radiation effects; Silver; Substrates; Xenon; Heavy ion; power MOSFET; single-event gate rupture (SEGR);
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2011.2171995
