• DocumentCode
    1382522
  • Title

    Effects of Ion Atomic Number on Single-Event Gate Rupture (SEGR) Susceptibility of Power MOSFETs

  • Author

    Lauenstein, Jean-Marie ; Goldsman, Neil ; Liu, Sandra ; Titus, Jeffrey L. ; Ladbury, Raymond L. ; Kim, Hak S. ; Phan, Anthony M. ; LaBel, Kenneth A. ; Zafrani, Max ; Sherman, Phillip

  • Author_Institution
    NASA/GSFC, Greenbelt, MD, USA
  • Volume
    58
  • Issue
    6
  • fYear
    2011
  • Firstpage
    2628
  • Lastpage
    2636
  • Abstract
    The relative importance of heavy-ion interaction with the oxide, charge ionized in the epilayer, and charge ionized in the drain substrate, on the bias for SEGR failure in vertical power MOSFETs is experimentally investigated. The results indicate that both the charge ionized in the epilayer and the ion atomic number are important parameters of SEGR failure. Implications on SEGR hardness assurance are discussed.
  • Keywords
    power MOSFET; radiation effects; substrates; SEGR failure; drain substrate; heavy-ion interaction; ion atomic number; power MOSFET; single-event gate rupture susceptibility; Ion beams; Logic gates; MOSFETs; Radiation effects; Silver; Substrates; Xenon; Heavy ion; power MOSFET; single-event gate rupture (SEGR);
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2011.2171995
  • Filename
    6086744
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1382522