Title :
Simulation for statistical variability in realistic 20nm MOSFET
Author :
Liping Wang ; Brown, A.R. ; Millar, C. ; Burenkov, Alex ; Xingsheng Wang ; Asenov, Asen ; Lorenz, Juergen
Author_Institution :
Device Modelling Group, Univ. of Glasgow, Glasgow, UK
Abstract :
In order to enable the simulation of statistical variability simulation in non-ideal device structures which arise from complex patterning steps, the GSS atomistic simulator, GARAND, has been enhanced for handling arbitrary 3D device geometries, and a structure translation tool MONOLITH has been developed to transfer the information about the device geometry, material composition and doping distribution into an intermediate structure and file format which can then be imported by GARAND. Statistical simulations on an example of a 20nm bulk Silicon MOSFET with STI are demonstrated.
Keywords :
MOSFET; statistical analysis; GARAND; GSS atomistic simulator; MONOLITH structure translation tool; STI; arbitrary 3D device geometry; bulk silicon MOSFET; complex patterning steps; material composition; nonideal device structures; realistic MOSFET; size 20 nm; statistical simulations; statistical variability simulation; Doping; Geometry; MOSFET; Semiconductor process modeling; Solid modeling; Standards; Three-dimensional displays; MOSFET; TCAD; statistical variability;
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2014 15th International Conference on
Conference_Location :
Stockholm
DOI :
10.1109/ULIS.2014.6813892
