• DocumentCode
    138265
  • Title

    The impact of interface states on the mobility and the drive current of III-V MOSFETs

  • Author

    Osgnach, Patrik ; Caruso, E. ; Lizzit, Daniel ; Palestri, Pierpaolo ; Esseni, David ; Selmi, Luca

  • Author_Institution
    DIEGM, Univ. of Udine, Udine, Italy
  • fYear
    2014
  • fDate
    7-9 April 2014
  • Firstpage
    21
  • Lastpage
    24
  • Abstract
    We investigate the effect of interface states at the channel/insulator interface of III-V MOSFETs by means of accurate Schrödinger-Poisson and Multi-subband Monte Carlo simulations. Traps in the conduction band are found to be the main responsible of the Fermi level pinning observed in the experiments. These traps impact the mobility measurements as well as the current drive of short channel devices.
  • Keywords
    Fermi level; III-V semiconductors; MOSFET; Monte Carlo methods; Poisson equation; Schrodinger equation; conduction bands; interface states; Fermi level pinning; III-V MOSFETs; Schrödinger-Poisson simulations; conduction band; drive current; interface state effect; mobility measurements; multisubband Monte Carlo simulations; short channel devices; Hall effect; Interface states; Logic gates; Rough surfaces; Scattering; Surface roughness;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultimate Integration on Silicon (ULIS), 2014 15th International Conference on
  • Conference_Location
    Stockholm
  • Type

    conf

  • DOI
    10.1109/ULIS.2014.6813896
  • Filename
    6813896
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=138265