DocumentCode :
1382659
Title :
Introduction to turn-off silicon-controlled rectifiers
Author :
Storm, F. Herbert
Author_Institution :
General Electric Company, Schenectady, N. Y.
Volume :
82
Issue :
3
fYear :
1963
fDate :
7/1/1963 12:00:00 AM
Firstpage :
375
Lastpage :
383
Abstract :
The term ¿turn-off silicon-controlled rectifier¿ relates to a 4-layer p-n-p-n switch, which can be turned on and off by gate current pulses of opposite polarities. Conditions for gate turn-off are analyzed by the carrier charge concept. Two methods for obtaining gate turn-off are developed and experimentally verified. Turn-off current gains of 1,000, and more, were measured. An estimate is made regarding larger turn-off SCRs (silicon-controlled rectifiers) of the future, and some applications are listed.
fLanguage :
English
Journal_Title :
American Institute of Electrical Engineers, Part I: Communication and Electronics, Transactions of the
Publisher :
ieee
ISSN :
0097-2452
Type :
jour
DOI :
10.1109/TCE.1963.6373322
Filename :
6373322
Link To Document :
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