A quasi-two-dimensional HEMT model for DC and microwave simulation

Author

Singh, Ranjit ; Snowden, Christopher M.

Author_Institution

Nat. Phys. Lab., New Delhi, India

Volume

45

Issue

6

fYear

1998

fDate

6/1/1998 12:00:00 AM

Firstpage

1165

Lastpage

1169

Abstract

A comprehensive quasi-two-dimensional (Q-2-D) physical HEMT simulator is described for microwave CAD applications. It is used to accurately predict the DC and small-signal microwave performance of HEMT´s. This simulator, which accounts for hot-electron effects in submicron HEMT´s, includes parasitic MESFET conduction, quantum effects, and substrate injection phenomena. The accuracy of the present simulator is demonstrated by comparison with measured data for microwave HEMT´s

Keywords

circuit CAD; circuit analysis computing; high electron mobility transistors; hot carriers; microwave field effect transistors; semiconductor device models; DC simulation; hot-electron effects; microwave CAD applications; microwave HEMT; microwave simulation; parasitic MESFET conduction; physical HEMT simulator; quantum effects; quasi-two-dimensional HEMT model; small-signal microwave performance; submicron HEMT; substrate injection phenomena; Circuit simulation; Computational modeling; HEMTs; MMICs; Microwave devices; Nonhomogeneous media; Quantum mechanics; Steady-state; Substrates; Time domain analysis;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.678498

Filename

678498