Title :
Integrating 3D PIN germanium detectors with high-k ALD fabricated slot waveguides
Author :
Naiini, Maziar M. ; Radamson, H.H. ; Malm, Gunnar ; Ostling, Mikael
Author_Institution :
Sch. of Inf. & Commun. Technol., Integrated Devices & Circuits, KTH R. Inst. of Technol., Kista, Sweden
Abstract :
A novel device technology for photonics integrated circuits (PICs) is presented. In this work germanium PIN photodetectors are embedded in back-end deposited high-k slot waveguides. The waveguides are fabricated using chemical vapor deposited amorphous silicon and atomic layer deposition of Al2O3 thin films. The germanium PIN stack is selectively grown on a bulk silicon substrate. The detectors are butt coupled to the slot waveguides. Using our selective germanium growth and interconnect technology we study a 3D multilayer photonic integration for CMOS back-end of the line (BEOL) process. Finally we demonstrate the fabrication of a photonic chip deploying this technology platform.
Keywords :
CMOS integrated circuits; atomic layer deposition; chemical vapour deposition; elemental semiconductors; germanium; integrated circuit interconnections; integrated circuit manufacture; integrated optics; integrated optoelectronics; optical waveguides; photodetectors; semiconductor thin films; 3D PIN germanium photodetector; 3D multilayer photonic integration; BEOL process; CMOS back-end of the line process; Ge; PIC; Si; atomic layer deposition; back-end deposited high-k slot waveguide; chemical vapor deposited amorphous silicon; germanium PIN stack; high-k ALD fabricated slot waveguide; interconnect technology; photonic chip fabrication; photonics integrated circuit; thin film; Couplers; Detectors; Germanium; Optical waveguides; Photodetectors; Photonics; Silicon; CMOS technology; germanium photodetectors; optical interconnects; photonics integrated circuits(PIC); silicon photonics; slot waveguides;
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2014 15th International Conference on
Conference_Location :
Stockholm
DOI :
10.1109/ULIS.2014.6813902
