Title :
Single-voltage-supply highly efficient E/D dual-gate pseudomorphic double-hetero HEMT´s with platinum buried gates
Author :
Tanimoto, Takuma ; Ohbu, Isao ; Tanaka, Satoshi ; Kawai, Akie ; Kudo, Makoto ; Terano, Akihisa ; Nakamura, Tohru
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
fDate :
6/1/1998 12:00:00 AM
Abstract :
Highly efficient enhance/depletion (E/D) dual-gate HEMT´s for use in high-power linear amplifiers with a single biasing supply are demonstrated. These devices include platinum buried gates to realize a single biasing supply. A double-heterostructure and a GaAs/InGaAs/GaAs superlattice channel were adopted to obtain a good linearity and a large gain. An E/D dual-gate field effect transistors (FET) structure is also adopted to improve the gain and efficiency. High output power of 24 dBm, high power gain of 24 dB, and high power-added-efficiency of 46% for the gate width of 4-mm sample were obtained under conditions with a 1.5-GHz Japan Personal Digital Cellular (PDC) standard and with a +3.5 V single biasing supply
Keywords :
III-V semiconductors; UHF amplifiers; UHF field effect transistors; cellular radio; digital radio; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor superlattices; 1.5 GHz; 24 dB; 3.5 V; 46 percent; GaAs-InGaAs-GaAs; PDC standard; UHF FETs; buried gates; dual-gate pseudomorphic double-hetero HEMT; efficiency; enhance/depletion devices; gain; gate width; high-power linear amplifiers; linearity; output power; power-added-efficiency; single biasing supply; superlattice channel; FETs; Gain; Gallium arsenide; HEMTs; High power amplifiers; Indium gallium arsenide; Linearity; Platinum; Power generation; Superlattices;
Journal_Title :
Electron Devices, IEEE Transactions on
