DocumentCode
1383057
Title
A high sensitivity lead-titanate (PbTiO3) pyroelectric thin-film infrared sensor with temperature isolation improvement structure
Author
Jyh-Jier Ho ; Fang, Y.K. ; Wu, K.H. ; Hsieh, W.T. ; Chu, C.W. ; Huang, C.R. ; Ju, M.S. ; Chang, C.P.
Author_Institution
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume
19
Issue
6
fYear
1998
fDate
6/1/1998 12:00:00 AM
Firstpage
189
Lastpage
191
Abstract
An infrared (IR) sensor with the lead-titanate (PbTiO3) thin-film using the technology of micro-electromechanical system to achieve a better thermal isolation structure has been fabricated and developed, The major IR-sensing part on the cantilever beam with dimensions of 200×100×2 μm3 consists of a 500 /spl Aring/ PbTiO3 layer deposited by RF sputtering, and an evaporated bismuth (Bi) layer. This thermal isolation improved structure exhibits a much superior performance to that of a traditional IR-sensing bulk structure on the experimental results, which show a 200% and 300% improvement in current gain under the incident optical power 500 μW and 6 V applied bias at room temperature and 77 K, respectively,.
Keywords
infrared detectors; lead compounds; microsensors; pyroelectric detectors; sputtered coatings; thin film devices; 293 K; 500 A; 500 muW; 6 V; 77 K; Bi-PbTiO/sub 3/; MEMS technology; PbTiO/sub 3/; RF sputtered layer; Si; cantilever beam; evaporated Bi layer; high sensitivity infrared sensor; microelectromechanical system; pyroelectric thin-film IR sensor; temperature isolation improvement structure; thermal isolation structure; Bismuth; Infrared sensors; Isolation technology; Microelectromechanical systems; Radio frequency; Sensor systems; Sputtering; Structural beams; Thermal sensors; Thin film sensors;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.678539
Filename
678539
Link To Document