Title :
Improved microwave performance on low-resistivity Si substrates by Si+ ion implantation
Author :
Chen, Pin-Quan ; Chan, Yi-Jen
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
fDate :
9/1/2000 12:00:00 AM
Abstract :
Microwave characteristics of spiral inductors on low-resistivity Si substrates have been improved by implanting Si28+ ions. Spiral inductors fabricated on these implanted substrates demonstrate better Q-value and microwave performance. The Q-value of inductor enhanced 60% on the implanted substrates than that of low resistivity Si substrates. An equivalent circuit model of inductor has been evaluated to discuss the effect of substrate loss
Keywords :
MMIC; Q-factor; UHF integrated circuits; equivalent circuits; inductors; ion implantation; silicon; substrates; Q-value; Si; Si+ ion implantation; equivalent circuit model; implanted substrates; low-resistivity Si substrates; microwave performance; spiral inductors; substrate loss; Electromagnetic waveguides; Ferrites; Ion implantation; Loaded waveguides; Microwave devices; Microwave theory and techniques; Permittivity; Phase shifters; Rectangular waveguides; Slabs;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
