• DocumentCode
    1383086
  • Title

    Improved microwave performance on low-resistivity Si substrates by Si+ ion implantation

  • Author

    Chen, Pin-Quan ; Chan, Yi-Jen

  • Author_Institution
    Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
  • Volume
    48
  • Issue
    9
  • fYear
    2000
  • fDate
    9/1/2000 12:00:00 AM
  • Firstpage
    1582
  • Lastpage
    1585
  • Abstract
    Microwave characteristics of spiral inductors on low-resistivity Si substrates have been improved by implanting Si28+ ions. Spiral inductors fabricated on these implanted substrates demonstrate better Q-value and microwave performance. The Q-value of inductor enhanced 60% on the implanted substrates than that of low resistivity Si substrates. An equivalent circuit model of inductor has been evaluated to discuss the effect of substrate loss
  • Keywords
    MMIC; Q-factor; UHF integrated circuits; equivalent circuits; inductors; ion implantation; silicon; substrates; Q-value; Si; Si+ ion implantation; equivalent circuit model; implanted substrates; low-resistivity Si substrates; microwave performance; spiral inductors; substrate loss; Electromagnetic waveguides; Ferrites; Ion implantation; Loaded waveguides; Microwave devices; Microwave theory and techniques; Permittivity; Phase shifters; Rectangular waveguides; Slabs;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/22.869012
  • Filename
    869012
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1383086