Title :
Effects of Guard-Ring Structures on the Performance of Silicon Avalanche Photodetectors Fabricated With Standard CMOS Technology
Author :
Lee, Myung-Jae ; Rücker, Holger ; Choi, Woo-Young
Author_Institution :
Dept. of Electr. & Electron. Eng., Yonsei Univ., Seoul, South Korea
Abstract :
We investigate the effects of guard-ring (GR) structures on the performance of silicon avalanche photodetectors (APDs) fabricated with the standard complementary metal-oxide-semiconductor (CMOS) technology. Four types of CMOS-compatible APDs (CMOS-APDs) based on the p+/ n-well junction with different GR structures are fabricated, and their electric-field profiles are simulated and analyzed. Current characteristics, responsivity, avalanche gain, and photodetection bandwidth for CMOS-APDs are measured and compared. It is demonstrated that the GR realized with shallow trench isolation provides the best CMOS-APD performance.
Keywords :
CMOS integrated circuits; avalanche photodiodes; elemental semiconductors; photodetectors; semiconductor device manufacture; silicon; Si; avalanche photodetectors; complementary metal-oxide-semiconductor; electric-field profiles; guard-ring structures effects; standard CMOS technology; Avalanche breakdown; CMOS integrated circuits; CMOS technology; Junctions; Photodetectors; Silicon; Avalanche photodetector (APD); avalanche photodiode; edge breakdown; guard ring; optical interconnect; shallow trench isolation (STI); silicon photonics; standard complementary metal–oxide-semiconductor (CMOS) technology;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2172390
