Practical accuracy analysis of some existing effective channel length and series resistance extraction methods for MOSFET´s

A method to analyze the accuracy of the extracted values for the channel length (L_eff) and series resistance (R_s) of MOSFET devices is presented. The analysis is based on a statistical argument being the variance σ of the extracted results. This variance is found to be a good measure for the accuracy of the particular extraction method used. It is shown that, in the case of deep submicron technologies, errors as large as 200 nm for ΔL can be made for these extraction methods depending on the process design and the process control. The use of a single transistor method is suggested as a possible solution to the low accuracy of the L-array methods