Title :
High-speed InGaAlAs/InAlAs multiple quantum well optical modulators
Author :
Wakita, Koichi ; Kotaka, Isamu ; Mitomi, Osamu ; Asai, Hiromitsu ; Kawamura, Yuichi ; Naganuma, Mitsuru
Author_Institution :
NTT Opto-Electron. Lab., Kanagawa, Japan
fDate :
7/1/1990 12:00:00 AM
Abstract :
High-speed modulation over 22 GHz for waveguided InGaAlAs/InAlAs multiple quantum well (MQW) optical modulators is described. A large on/off ratio of over 25 dB is demonstrated with a low-drive voltage (6 V) operating in the 1.55-μm wavelength region. The design and characteristics of MQW p-i-n modulators are discussed. The causes of large-insertion loss and the required drive voltage bandwidth figure of merit for the MQW modulator are discussed. The frequency response measurements show that the response speed is limited by the RC time constant of the device. This suggests that the speed can be further enhanced by decreasing the size and capacitance of the device
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high-speed optical techniques; indium compounds; integrated optics; optical losses; optical modulation; p-i-n diodes; semiconductor quantum wells; 1.55 micron; 22 GHz; 6 V; InGaAlAs-InAlAs; MQW modulator capacitance; MQW p-i-n modulators; RC time constant; drive voltage bandwidth figure of merit; frequency response measurements; high-speed modulation; large on/off ratio; large-insertion loss; low-drive voltage; multiple quantum well optical modulators; response speed; waveguided optical modulators; Bandwidth; Drives; High speed optical techniques; Indium compounds; Optical losses; Optical modulation; Optical waveguides; PIN photodiodes; Quantum well devices; Voltage;
Journal_Title :
Lightwave Technology, Journal of
