Title :
Analytical model for the surface field distribution of SOI RESURF devices
Author :
Chung, Sang-Koo ; Han, Seung-Youp
Author_Institution :
Sch. of Electr. & Electron. Eng., Ajou Univ., Suwon, South Korea
fDate :
6/1/1998 12:00:00 AM
Abstract :
An analytical model is presented to determine the electric field distribution along the semiconductor surface of silicon-on-insulator (SOI) REduced SURface Field (RESURF) devices, which allows an approximate but explicit expression for the surface field in terms of the doping concentration, the lengths of the gate and drain field plate, the thicknesses of the gate and buried oxide, and the applied voltages. Numerical simulations support the analytical results
Keywords :
MOSFET; doping profiles; electric breakdown; electric fields; semiconductor device models; semiconductor device reliability; silicon-on-insulator; MOSFETs; SOI RESURF devices; analytical model; buried oxide; doping concentration; drain field plate; gate thickness; semiconductor surface; surface field distribution; Analytical models; Dielectric constant; Dielectric measurements; Numerical simulation; Position measurement; Semiconductor diodes; Semiconductor films; Silicon on insulator technology; Thickness measurement; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
