Title :
Reduction of interface traps in p-channel MOS transistors during channel-hot-hole stress
Author :
Han, K. Michael ; Sah, Chih Tang
Author_Institution :
Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA
fDate :
6/1/1998 12:00:00 AM
Abstract :
Reduction of the interface trap density over the p-channel of MOS transistors during channel hot hole stress is observed from DCIV measurements. A proposed model consists of hydrogenation of the residual interfacial bonds by hydrogen and the hydrogen is released from the hydrogenated boron in the p+drain region by the channel hot holes
Keywords :
MOSFET; characteristics measurement; electron traps; hot carriers; semiconductor device reliability; semiconductor device testing; DCIV measurements; channel-hot-hole stress; hydrogenation; interface trap density; p-channel MOS transistors; p+drain region; residual interfacial bonds; Boron; Degradation; Density measurement; Electron traps; Hot carriers; Hydrogen; MOSFETs; Residual stresses; Spontaneous emission; Stress measurement;
Journal_Title :
Electron Devices, IEEE Transactions on
