DocumentCode :
1383391
Title :
Corrections To "Analytical Model For Threshold Voltage Shift Due To Impurity Penetration Through A Thin Gate Oxide"
Author :
Suzuki, Kunihiro
Volume :
45
Issue :
6
fYear :
1998
fDate :
6/1/1998 12:00:00 AM
Firstpage :
1384
Lastpage :
1384
Keywords :
Analytical models; Boron; Impurities; Threshold voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.1998.678586
Filename :
678586
Link To Document :
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