Title :
Corrections To "Analytical Model For Threshold Voltage Shift Due To Impurity Penetration Through A Thin Gate Oxide"
Author :
Suzuki, Kunihiro
fDate :
6/1/1998 12:00:00 AM
Keywords :
Analytical models; Boron; Impurities; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.1998.678586
