DocumentCode

1383391

Title

Corrections To "Analytical Model For Threshold Voltage Shift Due To Impurity Penetration Through A Thin Gate Oxide"

Author

Suzuki, Kunihiro

Volume

45

Issue

6

fYear

1998

fDate

6/1/1998 12:00:00 AM

Firstpage

1384

Lastpage

1384

Keywords

Analytical models; Boron; Impurities; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.1998.678586

Filename

678586