Title :
Optimum design of δ-doped InGaAs avalanche photodiode by using quasi-ionization rates
Author :
Ito, Masanori ; Mikawa, Takashi ; Wada, Osamu
Author_Institution :
Fujitsu Lab. Ltd., Atsugi, Japan
fDate :
7/1/1990 12:00:00 AM
Abstract :
An avalanche photodiode (APD) designed by using quasi-ionization rates in InP and InGaAs is described. The structure has a δ-doped layer in an InP window layer. The heterointerface electric field is investigated and determined to prevent the tunneling current and carrier multiplication in InGaAs. The gain bandwidth (GB) product of the δ-doped APD is analyzed by R.B. Emmons´s (1967) p-i-n electric field method. The highest GB product is 160 GHz
Keywords :
III-V semiconductors; avalanche photodiodes; electric field measurement; gallium arsenide; indium compounds; δ-doped InGaAs avalanche photodiode; δ-doped layer; InGaAs; InP; carrier multiplication; gain bandwidth; heterointerface electric field; p-i-n electric field method; photodiode design; quasi-ionization rates; tunneling current; window layer; Absorption; Avalanche photodiodes; Bandwidth; Dark current; Indium gallium arsenide; Indium phosphide; P-n junctions; PIN photodiodes; Photonic band gap; Tunneling;
Journal_Title :
Lightwave Technology, Journal of
