DocumentCode
1383508
Title
Optimum design of δ-doped InGaAs avalanche photodiode by using quasi-ionization rates
Author
Ito, Masanori ; Mikawa, Takashi ; Wada, Osamu
Author_Institution
Fujitsu Lab. Ltd., Atsugi, Japan
Volume
8
Issue
7
fYear
1990
fDate
7/1/1990 12:00:00 AM
Firstpage
1046
Lastpage
1050
Abstract
An avalanche photodiode (APD) designed by using quasi-ionization rates in InP and InGaAs is described. The structure has a δ-doped layer in an InP window layer. The heterointerface electric field is investigated and determined to prevent the tunneling current and carrier multiplication in InGaAs. The gain bandwidth (GB) product of the δ-doped APD is analyzed by R.B. Emmons´s (1967) p-i-n electric field method. The highest GB product is 160 GHz
Keywords
III-V semiconductors; avalanche photodiodes; electric field measurement; gallium arsenide; indium compounds; δ-doped InGaAs avalanche photodiode; δ-doped layer; InGaAs; InP; carrier multiplication; gain bandwidth; heterointerface electric field; p-i-n electric field method; photodiode design; quasi-ionization rates; tunneling current; window layer; Absorption; Avalanche photodiodes; Bandwidth; Dark current; Indium gallium arsenide; Indium phosphide; P-n junctions; PIN photodiodes; Photonic band gap; Tunneling;
fLanguage
English
Journal_Title
Lightwave Technology, Journal of
Publisher
ieee
ISSN
0733-8724
Type
jour
DOI
10.1109/50.56405
Filename
56405
Link To Document