Title :
Parametric study of laterally acoustically coupled bulk acoustic wave filters
Author :
Meltaus, Johanna ; Pensala, Tuomas ; Kokkonen, Kimmo
Author_Institution :
VTT Tech. Res. Centre of Finland, Espoo, Finland
Abstract :
Acoustically coupled thin-film bulk acoustic wave resonator filters, in which the coupling takes place mechanically in the lateral direction between closely-spaced narrow resonators, are a promising approach to passband filtering at gigahertz frequencies. In this paper, filters with interdigital electrode structures are studied. Electrode number, electrode width, and coupling gap width are varied. The resonators are solidly mounted, having an acoustic mirror isolating the resonator from a Si substrate and providing the means to engineer the acoustic dispersion properties of the resonators. The center frequency of the filters is around 2 GHz. Electrical frequency responses of the filters are measured and the strength of the lateral acoustic coupling is calculated from the measurements. The effects of device parameters on the acoustic coupling and the obtainable filter bandwidth are analyzed in detail. A bandpass filter with 4.9% bandwidth, minimum insertion loss of 2 dB and sharp transition from passband to suppression band, is presented.
Keywords :
acoustic resonator filters; band-pass filters; bulk acoustic wave devices; elemental semiconductors; frequency response; silicon; thin film devices; Si; acoustic mirror; close-spaced narrow resonators; coupling gap; electrical frequency responses; electrode number; electrode width; filter bandwidth; gigahertz frequencies; interdigital electrode structures; lateral acoustic coupled bulk acoustic wave filters; lateral direction; loss 2 dB; parametric study; passband filtering; suppression band; Acoustics; Band pass filters; Couplings; Dispersion; Electrodes; Resonant frequency; Resonator filters;
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
DOI :
10.1109/TUFFC.2012.2515