DocumentCode
1383714
Title
Correspondence - Analysis of thickness vibrations of c-axis inclined zig-zag two-layered zinc oxide thin-film resonators
Author
Haifeng Zhang ; Kosinski, J.A.
Author_Institution
Dept. of Eng. Technol., Univ. of North Texas, Denton, TX, USA
Volume
59
Issue
12
fYear
2012
Firstpage
2831
Lastpage
2836
Abstract
The free vibrations of a two-layered C-axis inclined zig-zag ZnO thin-film bulk acoustic wave resonator (FBAR) connected to external impedance are analyzed. The frequency equation and mode shape for this resonator are derived based on the linear piezoelectric theory. The impedance characteristics of the FBAR are derived and compared with previous experimental results.
Keywords
II-VI semiconductors; acoustic impedance; acoustic resonators; bulk acoustic wave devices; piezoelectricity; thin film devices; vibrations; wide band gap semiconductors; zinc compounds; C-axis inclined zig-zag two-layered zinc oxide thin-film resonators; FBAR; bulk acoustic wave resonator; external impedance characteristics; free vibrations; frequency equation; linear piezoelectric theory; mode shape; thickness vibrations; Electrodes; Equations; Film bulk acoustic resonators; Impedance; Mathematical model; Resonant frequency; Zinc oxide;
fLanguage
English
Journal_Title
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
Publisher
ieee
ISSN
0885-3010
Type
jour
DOI
10.1109/TUFFC.2012.2526
Filename
6373808
Link To Document