DocumentCode
1383749
Title
Influence of Gate Corrugations on the Performance of Thin-Film Transistors
Author
Sambandan, Sanjiv
Author_Institution
Dept. of Instrum. & Appl. Phys., Indian Inst. of Sci., Bangalore, India
Volume
33
Issue
1
fYear
2012
Firstpage
56
Lastpage
58
Abstract
This letter investigates the influence of a corrugated gate on the transfer characteristics of thin-film transistors. Corrugations that run parallel to the length of the channel from source to drain are patterned on the gate. The author finds that these corrugations result in higher currents as compared to conventional planar-gate transistors.
Keywords
carrier mobility; thin film transistors; corrugated gate; gate corrugation; thin film transistor; transfer characteristics; Capacitance; Dielectrics; Electric potential; Electrodes; Insulators; Logic gates; Thin film transistors; Displays; large-area electronics; switches; thin-film transistors (TFTs);
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2011.2172675
Filename
6087371
Link To Document