Title :
Influence of Gate Corrugations on the Performance of Thin-Film Transistors
Author :
Sambandan, Sanjiv
Author_Institution :
Dept. of Instrum. & Appl. Phys., Indian Inst. of Sci., Bangalore, India
Abstract :
This letter investigates the influence of a corrugated gate on the transfer characteristics of thin-film transistors. Corrugations that run parallel to the length of the channel from source to drain are patterned on the gate. The author finds that these corrugations result in higher currents as compared to conventional planar-gate transistors.
Keywords :
carrier mobility; thin film transistors; corrugated gate; gate corrugation; thin film transistor; transfer characteristics; Capacitance; Dielectrics; Electric potential; Electrodes; Insulators; Logic gates; Thin film transistors; Displays; large-area electronics; switches; thin-film transistors (TFTs);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2172675
