Title :
Integrated millimeter-wave corner-cube antennas
Author :
Gearhart, Steven S. ; Ling, Curtis C. ; Rebeiz, Gabriel M.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fDate :
7/1/1991 12:00:00 AM
Abstract :
An integrated corner-reflector antenna has been designed, fabricated and measured at millimeter-wave frequencies. The structure consists of a traveling-wave antenna integrated on a 1.2-μm dielectric membrane, and suspended in a longitudinal cavity etched in a silicon wafer. A novel traveling wave antenna design, the modified-bend antenna, with an antenna length of 1.2 λ and spacing 0.96 λ from the apex, results in a wideband input impedance centered at 140 Ω and low cross-polarization levels. Measurements at 180-270 GHz show a well-defined pattern with low sidelobe levels, and a main-beam efficiency of 93% and 83% at 180 and 222 GHz, respectively. The monolithic approach allows the integration of a matching network and a Schottky-diode or SIS detector at the base of the antenna to yield a low-noise monolithic millimeter-wave receiver
Keywords :
antenna radiation patterns; antenna travelling wave arrays; microwave antennas; reflector antennas; 180 to 270 GHz; 83 percent; 93 percent; MM-wave; SIS detector; Schottky-diode; Si wafer; corner-cube antennas; dielectric membrane; integrated corner-reflector antenna; longitudinal cavity; low cross-polarization levels; low sidelobe levels; main-beam efficiency; matching network; millimeter-wave frequencies; modified-bend antenna; monolithic approach; radiation patterns; traveling-wave antenna; wideband input impedance; Antenna measurements; Biomembranes; Broadband antennas; Detectors; Dielectric measurements; Etching; Frequency measurement; Impedance; Millimeter wave measurements; Silicon;
Journal_Title :
Antennas and Propagation, IEEE Transactions on