DocumentCode :
1383848
Title :
Substrate noise coupling through planar spiral inductor
Author :
Pun, Alan L L ; Yeung, Tony ; Lau, Jack ; Clément, François J R ; Su, David K.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong
Volume :
33
Issue :
6
fYear :
1998
fDate :
6/1/1998 12:00:00 AM
Firstpage :
877
Lastpage :
884
Abstract :
While precious studies on substrate coupling focused mostly on noise induced through drain-bulk capacitance, substrate coupling from planar spiral inductors at radiofrequency (RF) via the oxide capacitance has not been reported. This paper presents the experimental and simulation results of substrate noise induced through planar inductors. Experimental and simulation results reveal that isolation between inductor and noise source is less than -30 dB at 1 GHz. Separation by distance reduces coupling by less than 2 dB in most practical cases. Practical examples reveal an obstacle in integrating RF tuned-gain amplifier with sensitive RF receiver circuits on the same die. Simulation results indicate that hollow inductors have advantages not only in having a higher self-resonant frequency, but also in reducing substrate noise as compared to conventional inductors. The effectiveness of using a broken guard ring in reducing inductor induced substrate noise is also examined
Keywords :
CMOS integrated circuits; UHF integrated circuits; UHF power amplifiers; capacitance; crosstalk; equivalent circuits; inductors; integrated circuit noise; substrates; 1 GHz; RF ICs; RF receiver circuits; RF tuned-gain amplifier; broken guard ring; hollow inductors; inductor induced substrate noise; n-well CMOS technology; oxide capacitance; planar spiral inductor; self-resonant frequency; substrate noise coupling; Capacitance; Circuit noise; Circuit simulation; Coupling circuits; Inductors; Noise reduction; Radio frequency; Radiofrequency amplifiers; Spirals; Tuned circuits;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/4.678650
Filename :
678650
Link To Document :
بازگشت