Title :
Effects of Different Annealing Gases on Pentacene OTFT With HfLaO Gate Dielectric
Author :
Deng, L.F. ; Lai, P.T. ; Chen, W.B. ; Xu, J.P. ; Liu, Y.R. ; Choi, H.W. ; Che, C.M.
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Hong Kong, Hong Kong, China
Abstract :
Pentacene organic thin-film transistors (OTFTs) with HfLaO high-κ gate dielectric were fabricated. The dielectric was prepared by a sputtering method and then annealed in N2, NH3, O2, or NO at 400 °C. The carrier mobility of the NH3-annealed OTFT could reach 0.59 cm2/V · s, which is higher than those of the other three devices. Moreover, the NH3-annealed OTFT obtained the smallest subthreshold swing of 0.26 V/dec among them. Furthermore, 1/f noise measurement indicated that the NH3-annealed OTFT achieved the smallest 1/f noise. All these should be attributed to the improved interface between the gate dielectric and the organic semiconductor associated with the passivation effects of the NH3 annealing on the dielectric surface.
Keywords :
1/f noise; annealing; carrier mobility; hafnium compounds; high-k dielectric thin films; lanthanum compounds; organic semiconductors; passivation; semiconductor thin films; sputtering; thin film transistors; 1/f noise measurement; HfLaO; NH3; annealing gases; carrier mobility; dielectric surface; high-κ gate dielectric; organic semiconductor; passivation effect; pentacene OTFT; pentacene organic thin-film transistor; sputtering method; temperature 400 C; Annealing; Dielectrics; Hafnium compounds; Logic gates; Noise; Organic thin film transistors; $ hbox{1}/f$ noise; Dielectric; high-$kappa$; organic thin-film transistor (OTFT);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2087314
