Combined Effects of Shunt and Luminescence Coupling on External Quantum Efficiency Measurements of Multijunction Solar Cells

Author

Li, Jing-Jing ; Lim, Swee Hoe ; Allen, Charles R. ; Ding, Ding ; Zhang, Yong-Hang

Author_Institution

Center for Photonics Innovation, Arizona State Univ., Tempe, AZ, USA

Volume

1

Issue

2

fYear

2011

Firstpage

225

Lastpage

230

Abstract

The combined effects of shunt and luminescence coupling on the measurement artifact of external quantum efficiency (EQE) of multi-junction solar cells are studied. The EQE measurement artifact is modeled using DC and small-signal equivalent circuits under voltage and light bias conditions. The modeling results are verified with EQE measurements of a Ge bottom cell of a triple-junction solar cell. It is found that the optimal bias light intensity to minimize the EQE measurement artifact is the result of the tradeoff between the shunt and the luminescence coupling effects.

Keywords

elemental semiconductors; equivalent circuits; germanium; luminescence; solar cells; DC circuits; EQE measurement artifact; Ge; Ge bottom cell; external quantum efficiency measurements; light bias conditions; luminescence coupling; multijunction solar cells; optimal bias light intensity; shunt coupling; small-signal equivalent circuits; triple-junction solar cell; voltage bias conditions; Electrical resistance measurement; Indium gallium arsenide; Luminescence; Photovoltaic cells; Quantum mechanics; Solar cells; Voltage measurement; Luminescence coupling; multi-junction solar cells; quantum efficiency; shunt;

fLanguage

English

Journal_Title

Photovoltaics, IEEE Journal of

Publisher

ieee

ISSN

2156-3381

Type

jour

DOI

10.1109/JPHOTOV.2011.2172188

Filename

6087996