DocumentCode :
1383919
Title :
Schottky Source/Drain InAlN/AlN/GaN MISHEMT With Enhanced Breakdown Voltage
Author :
Zhou, Qi ; Chen, Hongwei ; Zhou, Chunhua ; Feng, Z.H. ; Cai, S.J. ; Chen, Kevin J.
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
Volume :
33
Issue :
1
fYear :
2012
Firstpage :
38
Lastpage :
40
Abstract :
In this letter, we present the deployment of Schottky source/drain (SSD) in InAlN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) for off-state breakdown voltage improvement. The improved breakdown voltage relies on the suppression of electron injection into the buffer under the Schottky source contact. A VBD of 460 V is obtained in an SSD MISHEMT with an LGD = 10 μm, at a 170% improvement compared with that of the control MISHEMT featuring ohmic source/drain. Despite the SSD contacts, an SSD MISHEMT with a gate length of 1 μm exhibits a respectable drain current density of 416 mA/mm and a transconductance of 113 mS/mm.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; indium compounds; semiconductor device breakdown; wide band gap semiconductors; InAlN-AlN-GaN; SSD MISHEMT; Schottky source-drain MISHEMT; drain current density; electron injection suppression; enhanced breakdown voltage; metal-insulator-semiconductor high-electron-mobility transistors; size 1 mum; voltage 460 V; Aluminum gallium nitride; Electric breakdown; Gallium nitride; HEMTs; Logic gates; MODFETs; InAlN/GaN; Schottky source and drain; metal–insulator–semiconductor high-electron-mobility transistor (MISHEMT); off-state breakdown voltage;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2011.2172972
Filename :
6088000
Link To Document :
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