Title :
1.5-V-Operation Ultralow Power Circuit of Poly-Si TFTs Fabricated Using the NAOS Method
Author :
Kubota, Yasushi ; Matsumoto, Taketoshi ; Tsuji, Hiroshi ; Suzuki, Nobuhiko ; Imai, Shigeki ; Kobayashi, Hikaru
Author_Institution :
Display Device Bus. Group, Sharp Corp., Taki, Japan
Abstract :
We have fabricated thin-film transistors (TFTs) and liquid-crystal displays (LCDs) with monolithic drivers on glass substrates and achieved ultralow power consumption by operating with a low power-supply voltage at 3 V. The gate insulator of the TFTs has a stack structure with an ultrathin interfacial SiO2 layer formed by nitric acid oxidation of silicon and a 40-nm-thick SiO2 layer formed by plasma-enhanced chemical vapor deposition. Owing to the TFTs with the thin gate insulator, the driving circuits of the LCDs can be operated at a supply voltage of 1.5 V, which is much lower than that of conventional LCDs of 10-15 V.
Keywords :
driver circuits; elemental semiconductors; liquid crystal displays; low-power electronics; monolithic integrated circuits; nitridation; plasma CVD coatings; silicon; thin film transistors; NAOS method; Si; SiO2; gate insulator; glass substrate; liquid crystal displays; monolithic driver; nitric acid oxidation of silicon; plasma enhanced chemical vapor deposition; polysilicon TFT; thin film transistors; ultralow power circuit; ultrathin interfacial layer; voltage 1.5 V; voltage 3 V; Insulators; Inverters; Logic gates; Ring oscillators; Silicon; Thin film transistors; Threshold voltage; Driving circuit; liquid-crystal display (LCD); low power consumption; nitric acid oxidation of silicon (NAOS); thin-film transistor (TFT);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2011.2175395
