UIS Analysis and Characterization of the SONOS Gate Power MOSFET

Author

Zhou, Xianda ; Ng, Jacky C W ; Sin, Johnny K O

Author_Institution

Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China

Volume

59

Issue

2

fYear

2012

Firstpage

408

Lastpage

413

Abstract

In this paper, unclamped inductive switching (UIS) performance of the novel silicon-oxide-nitride-oxide-silicon (SONOS) gate power MOSFET (SG-MOSFET) is analyzed. The avalanche energy absorption of the SG-MOSFET at UIS is 5.2 times that of the conventional power MOSFET. Analysis shows that the improvement is due to the heavily doped p-body used in the device. Moreover, the influence of the structural parameters on the UIS performance of the device is experimentally characterized. Measurement results show that the UIS performance is not sensitive to the p⁺ contact width and slightly degrades with a larger gate length. Furthermore, the results show that it is promising to further improve the UIS performance of the device by using a more efficient charge trapping material in the gate dielectric to allow further increase in the p-body doping concentration.

Keywords

dielectric properties; elemental semiconductors; power MOSFET; semiconductor doping; silicon; silicon compounds; SG-MOSFET; SONOS gate power MOSFET characterisation; Si-SiO_x-SiN_x-SiO_x-Si; UIS analysis; avalanche energy absorption; charge trapping material; gate dielectric; gate length; heavily doped p-body; p-body doping concentration; silicon-oxide-nitride-oxide-silicon gate power MOSFET; structural parameters; undamped inductive switching performance; Charge carrier processes; Doping; Logic gates; Performance evaluation; Power MOSFET; Silicon; Avalanche energy; power MOSFET; silicon–oxide–nitride–oxide–silicon (SONOS); unclamped inductive switching (UIS);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2011.2174641

Filename

6088006