• DocumentCode
    1383986
  • Title

    Transport in Graphene: Studying Layers of BN, SiC, and SiO2

  • Author

    Ferry, D.K.

  • Author_Institution
    Sch. of Electr., Arizona State Univ., Tempe, AZ, USA
  • Volume
    6
  • Issue
    4
  • fYear
    2012
  • Firstpage
    18
  • Lastpage
    25
  • Abstract
    We will examine the mobility and high-field velocity in graphene placed upon various substrates, such as boron nitride (BN), silicon carbide (SiC), or silicon dioxide (SiO2). The transport is subject to the intrinsic phonons in graphene as well as flexural modes, but it is the remote polar modes from the substrate and impurities sited between the substrate layer and graphene that dominate the mobility and velocity.
  • Keywords
    bending; carrier mobility; graphene; phonon-impurity interactions; BN; C; SiC; SiO2; boron nitride substrate; flexural modes; graphene; high-field velocity; impurities; intrinsic phonons; mobility; remote polar modes; silicon carbide substrate; silicon dioxide substrate; substrate layer; transport properties; Charge carrier density; Graphene; Impurities; Phonons; Scattering; Silicon carbide; Substrates;
  • fLanguage
    English
  • Journal_Title
    Nanotechnology Magazine, IEEE
  • Publisher
    ieee
  • ISSN
    1932-4510
  • Type

    jour

  • DOI
    10.1109/MNANO.2012.2220233
  • Filename
    6374651
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1383986