Title :
Electronically switchable bulk acoustic wave resonator based on paraelectric state ferroelectric films
Author :
Kozyrev, A.B. ; Mikhaylov, A.K. ; Ptashnik, S.V. ; Zinoviev, S.V. ; Petrov, P.K. ; Alford, N McN ; Wang, Tao
Author_Institution :
Dept. of Phys. Electron. & Technol., St.-Petersburg State Electrotech. Univ., St. Petersburg, Russia
Abstract :
The electromechanical properties of multilayer microwave capacitance structures with two ferroelectric films in the paraelectric state are analysed. A film bulk acoustic wave resonator (FBAR) with about two times (approximately octave) resonance frequency switching is demonstrated. The switching phenomenon is due to the application of a unidirectional or oppositely directed DC control E-field to ferroelectric layers that results in the excitation of different acoustic eigenmodes in the resonator structure.
Keywords :
acoustic resonators; bulk acoustic wave devices; ferroelectric materials; ferroelectric thin films; acoustic eigenmode; electromechanical property; electronically switchable bulk acoustic wave resonator; film bulk acoustic wave resonator; multilayer microwave capacitance structure; paraelectric state ferroelectric film; resonance frequency switching; resonator structure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2011.3006
